provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.
| Part Number | APT10SCD65KCT |
|---|---|
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) (per Diode) | 17A |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 200µA @ 650V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1KV 10.5A TO247AD
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1KV 11A TO247AD
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A SOT-227
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A SOT-227
In Stock: 14
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1KV 8A TO247AD
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 28A T-MAX
In Stock: 3
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 28A T-MAX
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 25A SOT-227
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 28A TO-264
In Stock: 7
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 4A TO-247
In Stock: 30
