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| Part Number | JAN1N3613 |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 100µA @ 300V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | A, Axial |
| Supplier Device Package | - |
| Operating Temperature - Junction | -65°C ~ 175°C |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO203AB
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Description: DIODE GEN PURP 400V 35A DO203AB
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Description: DIODE GEN PURP 200V 12A DO203AA
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Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
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Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
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