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Part Number | TH58BVG2S3HTAI0 |
---|---|
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | EEPROM |
Technology | EEPROM - NAND |
Memory Size | 4Gb (512M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 2.7 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package | 48-TSOP I |
Manufacturer: Toshiba Semiconductor and Storage
Description: IC EEPROM 4GBIT 25NS 48TSOP
In Stock: 182
Manufacturer: Toshiba Semiconductor and Storage
Description: IC EEPROM 4GBIT 25NS 48TSOP
In Stock: 96
Manufacturer: Toshiba Semiconductor and Storage
Description: IC EEPROM 4GBIT 25NS 48TSOP
In Stock: 0
Manufacturer: Toshiba Semiconductor and Storage
Description: IC EEPROM 4GBIT 25NS 67FBGA
In Stock: 96