Part Number | JANTX1N6625 |
---|---|
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1100V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.75V @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 60ns |
Current - Reverse Leakage @ Vr | 500nA @ 1100V |
Capacitance @ Vr, F | 10pF @ 10V, 1MHz |
Mounting Type | Through Hole |
Package / Case | A, Axial |
Supplier Device Package | - |
Operating Temperature - Junction | -65°C ~ 150°C |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 100V 35A DO5
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 100V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO5
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO5
In Stock: 87
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO5
In Stock: 100
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 39
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 36
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 4