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| Part Number | IRF540,127 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1187pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Rds On (Max) @ Id, Vgs | 77 mOhm @ 17A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
In Stock: 4528
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
In Stock: 0
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
In Stock: 0
