rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Artikelnummer | BSM120D12P2C005 |
|---|---|
| Teilstatus | Active |
| FET Typ | 2 N-Channel (Half Bridge) |
| FET-Eigenschaft | Standard |
| Drain auf Source-Spannung (Vdss) | 1200V (1.2kV) |
| Strom - Dauerablass (Id) @ 25 ° C | 120A |
| Rds Ein (Max) @ Id, Vgs | - |
| Vgs (th) (Max) @ Id | 2.7V @ 22mA |
| Gate Ladung (Qg) (Max) @ Vgs | - |
| Eingangskapazität (Ciss) (Max) @ Vds | 14000pF @ 10V |
| Leistung max | 780W |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
| Befestigungsart | - |
| Paket / Fall | Module |
| Lieferantengerätepaket | Module |
Hersteller: Rohm Semiconductor
Beschreibung: MOSFET 2N-CH 1200V 120A MODULE
Auf Lager: 69
