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| Artikelnummer | HN3C10FUTE85LF |
|---|---|
| Teilstatus | Active |
| Transistor-Typ | 2 NPN (Dual) |
| Spannung - Kollektor-Emitter-Durchbruch (max.) | 12V |
| Frequenz - Übergang | 7GHz |
| Rauschzahl (dB Typ @ f) | 1.1dB @ 1GHz |
| Gewinnen | 11.5dB |
| Leistung max | 200mW |
| Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Aktuell - Sammler (Ic) (Max) | 80mA |
| Betriebstemperatur | - |
| Befestigungsart | Surface Mount |
| Paket / Fall | 6-TSSOP, SC-88, SOT-363 |
| Lieferantengerätepaket | US6 |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: TRANSISTOR NPN US6
Auf Lager: 0
