toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
| Artikelnummer | RN1706JE(TE85L,F) |
|---|---|
| Teilstatus | Discontinued at Digi-Key |
| Transistor-Typ | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Aktuell - Sammler (Ic) (Max) | 100mA |
| Spannung - Kollektor-Emitter-Durchbruch (max.) | 50V |
| Widerstand - Basis (R1) (Ohm) | 4.7k |
| Widerstand - Emitter Basis (R2) (Ohm) | 47k |
| Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Aktuell - Kollektor Cutoff (Max) | 100nA (ICBO) |
| Frequenz - Übergang | 250MHz |
| Leistung max | 100mW |
| Befestigungsart | Surface Mount |
| Paket / Fall | SOT-553 |
| Lieferantengerätepaket | ESV |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: TRANS 2NPN PREBIAS 0.1W ESV
Auf Lager: 15
