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| Artikelnummer | RN2709JE(TE85L,F) |
|---|---|
| Teilstatus | Active |
| Transistor-Typ | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Aktuell - Sammler (Ic) (Max) | 100mA |
| Spannung - Kollektor-Emitter-Durchbruch (max.) | 50V |
| Widerstand - Basis (R1) (Ohm) | 47k |
| Widerstand - Emitter Basis (R2) (Ohm) | 22k |
| Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Vce Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Aktuell - Kollektor Cutoff (Max) | 100nA (ICBO) |
| Frequenz - Übergang | 200MHz |
| Leistung max | 100mW |
| Befestigungsart | Surface Mount |
| Paket / Fall | SOT-553 |
| Lieferantengerätepaket | ESV |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: TRANS 2PNP PREBIAS 0.1W ESV
Auf Lager: 4000
