epc designs, develops, markets, and sells gallium nitride based power management devices using mature silicon foundries.
| Numero de parte | EPC2105ENGRT |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Half Bridge) |
| Característica FET | GaNFET (Gallium Nitride) |
| Drene a la fuente de voltaje (Vdss) | 80V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 9.5A |
| Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 20A, 5V |
| Vgs (th) (Max) @ Id | 2.5V @ 2.5mA |
| Carga de puerta (Qg) (Max) @ Vgs | 2.5nC @ 5V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 300pF @ 40V |
| Potencia - Max | - |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | Die |
| Paquete de dispositivo del proveedor | Die |
