diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Numéro d'article | DMG8601UFG-7 |
|---|---|
| État de la pièce | Active |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 20V |
| Courant - Drain continu (Id) @ 25 ° C | 6.1A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 6.5A, 4.5V |
| Vgs (th) (Max) @ Id | 1.05V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 8.8nC @ 4.5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 143pF @ 10V |
| Puissance - Max | 920mW |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 8-PowerUDFN |
| Package de périphérique fournisseur | U-DFN3030-8 |
Fabricant: Diodes Incorporated
La description: MOSFET 2N-CH 20V 6.1A DFN
En stock: 3000
Fabricant: Diodes Incorporated
La description: MOSFET 2N-CH 20V 4.9A 8TSSOP
En stock: 2500
Fabricant: Diodes Incorporated
La description: MOSFET N-CH 30V 11A TO252-3L
En stock: 2500
Fabricant: Diodes Incorporated
La description: MOSFET N-CH 30V 11.6A 8SOIC
En stock: 0
Fabricant: Diodes Incorporated
La description: MOSFET BVDSS: 501V 650V TO220-3
En stock: 0
