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Numéro d'article | 2N7639-GA |
---|---|
État de la pièce | Active |
FET Type | - |
La technologie | SiC (Silicon Carbide Junction Transistor) |
Drain à la tension de source (Vdss) | 650V |
Courant - Drain continu (Id) @ 25 ° C | 15A (Tc) (155°C) |
Tension du variateur (Max Rds On, Min Rds On) | - |
Vgs (th) (Max) @ Id | - |
Charge de porte (Qg) (Max) @ Vgs | - |
Capacitance d'entrée (Ciss) (Max) @ Vds | 1534pF @ 35V |
Vgs (Max) | - |
FET Caractéristique | - |
Dissipation de puissance (Max) | 172W (Tc) |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 15A |
Température de fonctionnement | -55°C ~ 225°C (TJ) |
Type de montage | Through Hole |
Package de périphérique fournisseur | TO-257 |
Paquet / cas | TO-257-3 |
Fabricant: ON Semiconductor
La description: MOSFET N-CH 60V 200MA TO-92
En stock: 0
Fabricant: ON Semiconductor
La description: MOSFET N-CH 60V 200MA TO-92
En stock: 0
Fabricant: ON Semiconductor
La description: MOSFET N-CH 60V 200MA TO-92
En stock: 0