genesic is a pioneer and a world leader in silicon carbide technology, while also invested in high power silicon technologies. the global leading manufacturers of industrial and defense systems depend on genesic's technology to elevate the performance and efficiency of their products.
| Numéro d'article | GA04JT17-247 |
|---|---|
| État de la pièce | Active |
| FET Type | - |
| La technologie | SiC (Silicon Carbide Junction Transistor) |
| Drain à la tension de source (Vdss) | 1700V |
| Courant - Drain continu (Id) @ 25 ° C | 4A (Tc) (95°C) |
| Tension du variateur (Max Rds On, Min Rds On) | - |
| Vgs (th) (Max) @ Id | - |
| Charge de porte (Qg) (Max) @ Vgs | - |
| Capacitance d'entrée (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 106W (Tc) |
| Rds On (Max) @ Id, Vgs | 480 mOhm @ 4A |
| Température de fonctionnement | 175°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-247AB |
| Paquet / cas | TO-247-3 |
Fabricant: GeneSiC Semiconductor
La description: MOD THYRISTOR CUSTOM SOT227
En stock: 0
Fabricant: GeneSiC Semiconductor
La description: TRANS SJT 1700V 4A TO-247AB
En stock: 26
