genesic is a pioneer and a world leader in silicon carbide technology, while also invested in high power silicon technologies. the global leading manufacturers of industrial and defense systems depend on genesic's technology to elevate the performance and efficiency of their products.
| Numéro d'article | GA05JT12-263 |
|---|---|
| État de la pièce | Active |
| FET Type | - |
| La technologie | SiC (Silicon Carbide Junction Transistor) |
| Drain à la tension de source (Vdss) | 1200V |
| Courant - Drain continu (Id) @ 25 ° C | 15A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | - |
| Vgs (th) (Max) @ Id | - |
| Charge de porte (Qg) (Max) @ Vgs | - |
| Capacitance d'entrée (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 106W (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Température de fonctionnement | 175°C (TJ) |
| Type de montage | - |
| Package de périphérique fournisseur | - |
| Paquet / cas | - |
Fabricant: GeneSiC Semiconductor
La description: TRANS SJT 100V 9A
En stock: 89
Fabricant: GeneSiC Semiconductor
La description: TRANS SJT 300V 9A
En stock: 64
Fabricant: GeneSiC Semiconductor
La description: TRANS SJT 1200V 5A
En stock: 0
