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| Numéro d'article | GA06JT12-247 |
|---|---|
| État de la pièce | Active |
| FET Type | - |
| La technologie | SiC (Silicon Carbide Junction Transistor) |
| Drain à la tension de source (Vdss) | 1200V |
| Courant - Drain continu (Id) @ 25 ° C | 6A (Tc) (90°C) |
| Tension du variateur (Max Rds On, Min Rds On) | - |
| Vgs (th) (Max) @ Id | - |
| Charge de porte (Qg) (Max) @ Vgs | - |
| Capacitance d'entrée (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | - |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 6A |
| Température de fonctionnement | 175°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-247AB |
| Paquet / cas | TO-247-3 |
Fabricant: GeneSiC Semiconductor
La description: MOD THYRISTOR CUSTOM SOT227
En stock: 0
Fabricant: GeneSiC Semiconductor
La description: TRANS SJT 1200V 6A TO-247AB
En stock: 0
