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| Numéro d'article | APTDF200H100G |
|---|---|
| État de la pièce | Active |
| Type de diode | Single Phase |
| La technologie | Standard |
| Tension - Peak Reverse (Max) | 1000V |
| Courant - Rectifié moyen (Io) | 255A |
| Tension - Avant (Vf) (Max) @ Si | 2.7V @ 200A |
| Courant - Fuite inverse @ Vr | 100µA @ 1000V |
| Température de fonctionnement | -40°C ~ 175°C (TJ) |
| Type de montage | Chassis Mount |
| Paquet / cas | SP6 |
| Package de périphérique fournisseur | SP6 |
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP4
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP1
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP4
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP4
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP4
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP1
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP4
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP6
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP6
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE MODULE FULL BRIDGE SP6
En stock: 0
