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| Numéro d'article | NTMD6N03R2G |
|---|---|
| État de la pièce | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 30V |
| Courant - Drain continu (Id) @ 25 ° C | 6A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 6A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 30nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 950pF @ 24V |
| Puissance - Max | 1.29W |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 8-SOIC (0.154", 3.90mm Width) |
| Package de périphérique fournisseur | 8-SOIC |
Fabricant: ON Semiconductor
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La description: MOSFET 2N-CH 30V 4.5A 8SOIC
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