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| Numéro d'article | 2SJ673-AZ |
|---|---|
| État de la pièce | Obsolete |
| FET Type | P-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 60V |
| Courant - Drain continu (Id) @ 25 ° C | 36A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (th) (Max) @ Id | - |
| Charge de porte (Qg) (Max) @ Vgs | 87nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 4600pF @ 10V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 2W (Ta), 32W (Tc) |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 18A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-220 Isolated Tab |
| Paquet / cas | TO-220-3 Isolated Tab |
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La description: MOSFET P-CH 30V .1A SSSMINI-3
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Fabricant: Toshiba Semiconductor and Storage
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En stock: 3000
