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Numéro d'article | SSM6P35FE(TE85L,F) |
---|---|
État de la pièce | Active |
FET Type | 2 P-Channel (Dual) |
FET Caractéristique | Logic Level Gate |
Drain à la tension de source (Vdss) | 20V |
Courant - Drain continu (Id) @ 25 ° C | 100mA |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 50mA, 4V |
Vgs (th) (Max) @ Id | 1V @ 1mA |
Charge de porte (Qg) (Max) @ Vgs | - |
Capacitance d'entrée (Ciss) (Max) @ Vds | 12.2pF @ 3V |
Puissance - Max | 150mW |
Température de fonctionnement | 150°C (TJ) |
Type de montage | Surface Mount |
Paquet / cas | SOT-563, SOT-666 |
Package de périphérique fournisseur | ES6 (1.6x1.6) |
Fabricant: Toshiba Semiconductor and Storage
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