provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.
| Part Number | APTDC902U601G |
|---|---|
| Part Status | Obsolete |
| Diode Configuration | 2 Independent |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) (per Diode) | 90A |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 90A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 1800µA @ 600V |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | SP1 |
| Supplier Device Package | SP1 |
Manufacturer: Microsemi Corporation
Description: RECT BRIDGE 10A 600V SP1
In Stock: 0
Manufacturer: Microsemi Corporation
Description: RECT BRIDGE 20A 1200V SP1
In Stock: 0
Manufacturer: Microsemi Corporation
Description: RECT BRIDGE 20A 600V SP1
In Stock: 0
Manufacturer: Microsemi Corporation
Description: POWER MODULE DIODE 1200V 40A SP1
In Stock: 0
Manufacturer: Microsemi Corporation
Description: POWER MODULE DIODE 600V 40A SP1
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE MODULE 600V 90A SP1
In Stock: 0
