Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN1908FE(TE85L,F)

Toshiba Semiconductor and Storage RN1908FE(TE85L,F)

Part Number
RN1908FE(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 10000 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    0.03255/pcs
  • 4,000 pcs

    0.03255/pcs
Total:0.03255/pcs Unit Price:
0.03255/pcs
Target price:
Quantity:
Product Parameter
Part Number RN1908FE(TE85L,F)
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
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