Part Number | SI1965DH-T1-E3 |
---|---|
Part Status | Active |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 1.3A |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 6V |
Power - Max | 1.25W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-70-6 (SOT-363) |
Manufacturer: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
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Manufacturer: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
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Manufacturer: Vishay Siliconix
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Manufacturer: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
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