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| Artikelnummer | IPA045N10N3GXKSA1 |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 100V |
| Strom - Dauerablass (Id) @ 25 ° C | 64A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 6V, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 150µA |
| Gate Ladung (Qg) (Max) @ Vgs | 117nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 8410pF @ 50V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 39W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 4.5 mOhm @ 64A, 10V |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | PG-TO220-FP |
| Paket / Fall | TO-220-3 Full Pack |
Hersteller: Infineon Technologies
Beschreibung: MOSFET N-CH 100V 64A TO220-FP
Auf Lager: 990
