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| Artikelnummer | PHK4NQ10T,518 |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 100V |
| Strom - Dauerablass (Id) @ 25 ° C | - |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 22nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 880pF @ 25V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 2.5W (Ta) |
| Rds Ein (Max) @ Id, Vgs | 70 mOhm @ 4A, 10V |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | 8-SO |
| Paket / Fall | 8-SOIC (0.154", 3.90mm Width) |
