Toshiba Semiconductor and Storage RN1905FE,LF(CB

Artikelnummer: RN1905FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: TRANS 2NPN PREBIAS 0.1W ES6
Bleifreier Status / RoHS-Status: Lead free / RoHS Compliant
Familie: Transistoren - Bipolar (BJT) - Arrays, mit Vorspannung

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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Referenzpreis
(In US-Dollar)
1 pcs
0.02415/pcs
4,000 pcs
0.02415/pcs
8,000 pcs
0.02100/pcs
12,000 pcs
0.01785/pcs
28,000 pcs
0.01680/pcs
100,000 pcs
0.01400/pcs

Gesamt:0.02415/pcs

Unit Price:

0.02415/pcs

Zielpreis:

Menge:

Produktparameter

Artikelnummer	RN1905FE,LF(CB
Teilstatus	Active
Transistor-Typ	2 NPN - Pre-Biased (Dual)
Aktuell - Sammler (Ic) (Max)	100mA
Spannung - Kollektor-Emitter-Durchbruch (max.)	50V
Widerstand - Basis (R1) (Ohm)	2.2k
Widerstand - Emitter Basis (R2) (Ohm)	47k
Gleichstromverstärkung (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Sättigung (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Aktuell - Kollektor Cutoff (Max)	500nA
Frequenz - Übergang	250MHz
Leistung max	100mW
Befestigungsart	Surface Mount
Paket / Fall	SOT-563, SOT-666
Lieferantengerätepaket	ES6