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Artikelnummer | RN2706JE(TE85L,F) |
---|---|
Teilstatus | Discontinued at Digi-Key |
Transistor-Typ | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Aktuell - Sammler (Ic) (Max) | 100mA |
Spannung - Kollektor-Emitter-Durchbruch (max.) | 50V |
Widerstand - Basis (R1) (Ohm) | 4.7k |
Widerstand - Emitter Basis (R2) (Ohm) | 47k |
Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Aktuell - Kollektor Cutoff (Max) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 100mW |
Befestigungsart | Surface Mount |
Paket / Fall | SOT-553 |
Lieferantengerätepaket | ESV |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: TRANS 2PNP PREBIAS 0.1W ESV
Auf Lager: 4308