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| Artikelnummer | TK16E60W,S1VX |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 600V |
| Strom - Dauerablass (Id) @ 25 ° C | 15.8A (Ta) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 3.7V @ 790µA |
| Gate Ladung (Qg) (Max) @ Vgs | 38nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1350pF @ 300V |
| Vgs (Max) | ±30V |
| FET-Eigenschaft | Super Junction |
| Verlustleistung (Max) | 130W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | TO-220 |
| Paket / Fall | TO-220-3 |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N CH 600V 15.8A TO-220
Auf Lager: 92
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 600V 15.8A TO-220AB
Auf Lager: 100
