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| Artikelnummer | TK3R1A04PL,S4X |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 40V |
| Strom - Dauerablass (Id) @ 25 ° C | 82A |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.4V @ 500µA |
| Gate Ladung (Qg) (Max) @ Vgs | 63.4nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 4670pF @ 20V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 36W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 3.8 mOhm @ 30A, 4.5V |
| Betriebstemperatur | 175°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | TO-220SIS |
| Paket / Fall | TO-220-3 Full Pack |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: X35 PB-F POWER MOSFET TRANSISTOR
Auf Lager: 788
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: X35 PB-F POWER MOSFET TRANSISTOR
Auf Lager: 675
