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| Part Number | NTMFD4C86NT1G |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A, 18.1A |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1153pF @ 15V |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) |
Manufacturer: ON Semiconductor
Description: MOSFET 2N-CH 30V 8DFN
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Manufacturer: ON Semiconductor
Description: MOSFET 2N-CH 30V 8DFN
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