rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Numero de parte | BSM120D12P2C005 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Half Bridge) |
| Característica FET | Standard |
| Drene a la fuente de voltaje (Vdss) | 1200V (1.2kV) |
| Corriente - Drenaje continuo (Id) a 25 ° C | 120A |
| Rds On (Max) @ Id, Vgs | - |
| Vgs (th) (Max) @ Id | 2.7V @ 22mA |
| Carga de puerta (Qg) (Max) @ Vgs | - |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 14000pF @ 10V |
| Potencia - Max | 780W |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | - |
| Paquete / caja | Module |
| Paquete de dispositivo del proveedor | Module |
Fabricante: Rohm Semiconductor
Descripción: MOSFET 2N-CH 1200V 120A MODULE
En stock: 69
