rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Numero de parte | RP1E090XNTCR |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | N-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 9A (Ta) |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | 4V, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA |
| Carga de puerta (Qg) (Max) @ Vgs | 6.8nC @ 5V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 440pF @ 10V |
| Vgs (Max) | ±20V |
| Característica FET | - |
| Disipación de potencia (Máx) | 2W (Ta) |
| Rds On (Max) @ Id, Vgs | 17 mOhm @ 9A, 10V |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | MPT6 |
| Paquete / caja | 6-SMD, Flat Leads |
