toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Numero de parte | 1SS413CT,L3F |
---|---|
Estado de la pieza | Active |
Tipo de diodo | Schottky |
Voltaje - DC Reverse (Vr) (Max) | 20V |
Corriente - promedio rectificado (Io) | 50mA |
Voltaje - Adelante (Vf) (Máx) @ Si | 550mV @ 50mA |
Velocidad | Small Signal =< 200mA (Io), Any Speed |
Tiempo de recuperación inversa (trr) | - |
Current - Reverse Leakage @ Vr | 500nA @ 20V |
Capacitancia @ Vr, F | 3.9pF @ 0V, 1MHz |
Tipo de montaje | Surface Mount |
Paquete / caja | SOD-882 |
Paquete de dispositivo del proveedor | SOD-882 |
Temperatura de funcionamiento - unión | -55°C ~ 125°C |
Fabricante: Rohm Semiconductor
Descripción: DIODE GEN PURP 80V 100MA VMN2
En stock: 0
Fabricante: Rohm Semiconductor
Descripción: DIODE GEN PURP 80V 100MA VMN2
En stock: 0
Fabricante: Rohm Semiconductor
Descripción: DIODE GEN PURP 80V 100MA VMD2
En stock: 48000
Fabricante: Rohm Semiconductor
Descripción: DIODE GEN PURP 80V 100MA EMD2
En stock: 8000
Fabricante: Rohm Semiconductor
Descripción: DIODE GEN PURP 80V 100MA EMD2
En stock: 0
Fabricante: Toshiba Semiconductor and Storage
Descripción: DIODE SCHOTTKY 20V 300MA SC70
En stock: 6000