rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Osa numero | R8002ANX |
|---|---|
| Osan tila | Active |
| FET-tyyppi | N-Channel |
| tekniikka | MOSFET (Metal Oxide) |
| Tyhjennä lähdejännite (Vdss) | 800V |
| Virta - Jatkuva tyhjennys (Id) @ 25 ° C | 2A (Tc) |
| Taajuusmuuttajan jännite (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 12.7nC @ 10V |
| Tulo Kapasitanssi (Ciss) (Max) @ Vds | 210pF @ 25V |
| Vgs (Max) | ±30V |
| FET-ominaisuus | - |
| Tehonsyöttö (maksimi) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3 Ohm @ 1A, 10V |
| Käyttölämpötila | 150°C (TJ) |
| Asennustyyppi | Through Hole |
| Toimittajan laitepaketti | TO-220FM |
| Pakkaus / kotelo | TO-220-2 Full Pack |
