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| Osa numero | RN1706JE(TE85L,F) |
|---|---|
| Osan tila | Discontinued at Digi-Key |
| Transistorityyppi | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Nykyinen - Collector (Ic) (Max) | 100mA |
| Jännite - keräilijän lähettimen jakautuminen (maksimi) | 50V |
| Vastus - pohja (R1) (ohmit) | 4.7k |
| Vastus - emitteripohja (R2) (ohmit) | 47k |
| DC Virranotto (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce-kylläisyys (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Nykyinen - Collector Cutoff (Max) | 100nA (ICBO) |
| Taajuus - Siirtyminen | 250MHz |
| Teho - Max | 100mW |
| Asennustyyppi | Surface Mount |
| Pakkaus / kotelo | SOT-553 |
| Toimittajan laitepaketti | ESV |
Valmistaja: Toshiba Semiconductor and Storage
Kuvaus: TRANS 2NPN PREBIAS 0.1W ESV
Varastossa: 15
