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| Numéro d'article | DGD2103S8-13 |
|---|---|
| État de la pièce | Obsolete |
| Configuration pilotée | Half-Bridge |
| Type de canal | Independent |
| Nombre de pilotes | 2 |
| Type de porte | IGBT, N-Channel MOSFET |
| Tension - Alimentation | 10 V ~ 20 V |
| Tension logique - VIL, VIH | 0.8V, 2.5V |
| Courant - sortie de crête (source, évier) | 290mA, 600mA |
| Type d'entrée | Non-Inverting |
| Tension latérale élevée - Max (Bootstrap) | 600V |
| Rise / Fall Time (Typ) | 100ns, 35ns |
| Température de fonctionnement | -40°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 8-SOIC (0.154", 3.90mm Width) |
| Package de périphérique fournisseur | 8-SO |
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Fabricant: Diodes Incorporated
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Fabricant: Diodes Incorporated
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Fabricant: Diodes Incorporated
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