epc designs, develops, markets, and sells gallium nitride based power management devices using mature silicon foundries.
| Numéro d'article | EPC2108 |
|---|---|
| État de la pièce | Active |
| FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Caractéristique | GaNFET (Gallium Nitride) |
| Drain à la tension de source (Vdss) | 60V, 100V |
| Courant - Drain continu (Id) @ 25 ° C | 1.7A, 500mA |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
| Vgs (th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Charge de porte (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V |
| Puissance - Max | - |
| Température de fonctionnement | -40°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 9-VFBGA |
| Package de périphérique fournisseur | 9-BGA (1.35x1.35) |
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