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| Numéro d'article | FQI5N20TU |
|---|---|
| État de la pièce | Obsolete |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 200V |
| Courant - Drain continu (Id) @ 25 ° C | 4.5A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 5V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 270pF @ 25V |
| Vgs (Max) | ±30V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 3.13W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.25A, 10V |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | I2PAK |
| Paquet / cas | TO-262-3 Long Leads, I²Pak, TO-262AA |
Fabricant: Fairchild/ON Semiconductor
La description: MOSFET N-CH 200V 9.5A I2PAK
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La description: MOSFET N-CH 600V 12A I2PAK
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La description: MOSFET N-CH 60V 13.6A I2PAK
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La description: MOSFET N-CH 60V 13A I2PAK
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En stock: 880
