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| Numéro d'article | GB10SLT12-252 |
|---|---|
| État de la pièce | Active |
| Type de diode | Silicon Carbide Schottky |
| Tension - DC Reverse (Vr) (Max) | 1200V |
| Courant - Rectifié moyen (Io) | 10A |
| Tension - Avant (Vf) (Max) @ Si | 2V @ 10A |
| La vitesse | No Recovery Time > 500mA (Io) |
| Temps de récupération inverse (trr) | 0ns |
| Courant - Fuite inverse @ Vr | 250µA @ 1200V |
| Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
| Type de montage | Surface Mount |
| Paquet / cas | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package de périphérique fournisseur | TO-252 |
| Température de fonctionnement - Jonction | -55°C ~ 175°C |
Fabricant: GeneSiC Semiconductor
La description: SIC SCHOTTKY DIODE 1200V 10A
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Fabricant: GeneSiC Semiconductor
La description: DIODE SCHOTTKY 1200V 10A TO220AC
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Fabricant: GeneSiC Semiconductor
La description: DIODE SCHOTTKY 1.2KV 12A TO247D
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Fabricant: GeneSiC Semiconductor
La description: DIODE SCHOTTKY 1.2KV 10A TO252
En stock: 0
