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| Numéro d'article | IPG20N06S3L-23 |
|---|---|
| État de la pièce | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 55V |
| Courant - Drain continu (Id) @ 25 ° C | 20A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 16A, 10V |
| Vgs (th) (Max) @ Id | 2.2V @ 20µA |
| Charge de porte (Qg) (Max) @ Vgs | 42nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 2950pF @ 25V |
| Puissance - Max | 45W |
| Température de fonctionnement | -55°C ~ 175°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 8-PowerVDFN |
| Package de périphérique fournisseur | PG-TDSON-8-4 |
Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 8TDSON
En stock: 0
Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 40V 20A TDSON-8
En stock: 5000
Fabricant: Infineon Technologies
La description: MOSFET N-CHANNEL_30/40V
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Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 8TDSON
En stock: 0
Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 8TDSON
En stock: 0
Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 8TDSON
En stock: 0
Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 8TDSON
En stock: 0
Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 8TDSON
En stock: 0
Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 8TDSON
En stock: 5000
Fabricant: Infineon Technologies
La description: MOSFET 2N-CH 8TDSON
En stock: 0
