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| Numéro d'article | 3LN01C-TB-E |
|---|---|
| État de la pièce | Not For New Designs |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 30V |
| Courant - Drain continu (Id) @ 25 ° C | 150mA (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (th) (Max) @ Id | - |
| Charge de porte (Qg) (Max) @ Vgs | 1.58nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 7pF @ 10V |
| Vgs (Max) | ±10V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 250mW (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7 Ohm @ 80mA, 4V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | 3-CP |
| Paquet / cas | TO-236-3, SC-59, SOT-23-3 |
Fabricant: ON Semiconductor
La description: MOSFET N-CH 30V 150MA 3CP
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Fabricant: ON Semiconductor
La description: MOSFET N-CH 30V 150MA 3CP
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Fabricant: ON Semiconductor
La description: MOSFET N-CH 30V 0.15A
En stock: 39000
Fabricant: ON Semiconductor
La description: MOSFET N-CH 30V 150MA MCP
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Fabricant: ON Semiconductor
La description: MOSFET N-CH 30V 0.15A SSFP
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Fabricant: ON Semiconductor
La description: MOSFET N-CH 30V 150MA SMCP
En stock: 0
