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| Numéro d'article | 5HN01M-TL-H |
|---|---|
| État de la pièce | Not For New Designs |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 50V |
| Courant - Drain continu (Id) @ 25 ° C | 100mA (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (th) (Max) @ Id | - |
| Charge de porte (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 6.2pF @ 10V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 150mW (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 50mA, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | 3-MCP |
| Paquet / cas | SC-70, SOT-323 |
Fabricant: ON Semiconductor
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