rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Numéro d'article | SCT2080KEC |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | SiCFET (Silicon Carbide) |
| Drain à la tension de source (Vdss) | 1200V |
| Courant - Drain continu (Id) @ 25 ° C | 40A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 18V |
| Vgs (th) (Max) @ Id | 4V @ 4.4mA |
| Charge de porte (Qg) (Max) @ Vgs | 106nC @ 18V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 2080pF @ 800V |
| Vgs (Max) | +22V, -6V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 262W (Tc) |
| Rds On (Max) @ Id, Vgs | 117 mOhm @ 10A, 18V |
| Température de fonctionnement | 175°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-247 |
| Paquet / cas | TO-247-3 |
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