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| Numéro d'article | SSM3K15ACT(TPL3) |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 30V |
| Courant - Drain continu (Id) @ 25 ° C | 100mA (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (th) (Max) @ Id | 1.5V @ 100µA |
| Charge de porte (Qg) (Max) @ Vgs | - |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 13.5pF @ 3V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 100mW (Ta) |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 10mA, 4V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | CST3 |
| Paquet / cas | SC-101, SOT-883 |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 20V 1.2A UFM
En stock: 0
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La description: MOSFET N-CH 30V 0.1A CST3
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La description: MOSFET N-CH 30V 0.1A CST3
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La description: MOSFET N-CH 30V 100MA CST3C
En stock: 10000
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 30V 0.1A SSM
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La description: MOSFET N-CH 30V 0.1A SSM
En stock: 0
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La description: MOSFET N-CH 30V 0.1A U-MOS III
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 30V 0.1A CST3
En stock: 0
