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Numéro d'article | TK55D10J1(Q) |
---|---|
État de la pièce | Obsolete |
FET Type | N-Channel |
La technologie | MOSFET (Metal Oxide) |
Drain à la tension de source (Vdss) | 100V |
Courant - Drain continu (Id) @ 25 ° C | 55A (Ta) |
Tension du variateur (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs (th) (Max) @ Id | 2.3V @ 1mA |
Charge de porte (Qg) (Max) @ Vgs | 110nC @ 10V |
Capacitance d'entrée (Ciss) (Max) @ Vds | 5700pF @ 10V |
Vgs (Max) | ±20V |
FET Caractéristique | - |
Dissipation de puissance (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 27A, 10V |
Température de fonctionnement | 150°C (TJ) |
Type de montage | Through Hole |
Package de périphérique fournisseur | TO-220(W) |
Paquet / cas | TO-220-3 |
Fabricant: Microchip Technology
La description: IC RFID 125KHZ READ ONLY TAG
En stock: 0
Fabricant: Microchip Technology
La description: IC RFID 125KHZ READ/WRITE TAG
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Fabricant: Microchip Technology
La description: IC RFID 125KHZ READ/WRITE TAG
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Fabricant: Microchip Technology
La description: IC TRANSPONDR CRYPTO SHORT CYCLE
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 100V 55A TO220W
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 100V 55A DPAK
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