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| Numéro d'article | SI4776DY-T1-GE3 |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 30V |
| Courant - Drain continu (Id) @ 25 ° C | 11.9A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.3V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 17.5nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 521pF @ 15V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 4.1W (Tc) |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 10A, 10V |
| Température de fonctionnement | -55°C ~ 150°C (TA) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | 8-SO |
| Paquet / cas | 8-SOIC (0.154", 3.90mm Width) |
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