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| Numero di parte | RN1908FE(TE85L,F) |
|---|---|
| Stato parte | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Corrente - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistore - Base (R1) (Ohm) | 22k |
| Resistor - Emitter Base (R2) (Ohm) | 47k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Corrente - Limite del collettore (max) | 100nA (ICBO) |
| Frequenza - Transizione | 250MHz |
| Potenza - Max | 100mW |
| Tipo di montaggio | Surface Mount |
| Pacchetto / caso | SOT-563, SOT-666 |
| Pacchetto dispositivo fornitore | ES6 |
fabbricante: Toshiba Semiconductor and Storage
Descrizione: TRANS 2NPN PREBIAS 0.2W US6
Disponibile: 0
fabbricante: Toshiba Semiconductor and Storage
Descrizione: TRANS 2NPN PREBIAS 0.1W ES6
Disponibile: 4000
