Home Product Index Discrete Semiconductor Transistors - FETs, MOSFETs - Single GP2M002A060PG

Global Power Technologies Group GP2M002A060PG

Part Number
GP2M002A060PG
Manufacturer
Global Power Technologies Group
Description
MOSFET N-CH 600V 2A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - FETs, MOSFETs - Single
Global Power Technologies Group

Global Power Technologies Group

global power technologies group, inc. is an integrated development and manufacturing company dedicated to products based on silicon carbide (sic) technologies.

In Stock 4005 pcs
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Product Parameter
Part Number GP2M002A060PG
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 52.1W (Tc)
Rds On (Max) @ Id, Vgs 4 Ohm @ 1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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