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| Part Number | IPB017N06N3 G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Gate Charge (Qg) (Max) @ Vgs | 275nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
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