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| Part Number | PHM30NQ10T,518 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 37.6A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 53.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 18A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HVSON (6x5) |
| Package / Case | 8-VDFN Exposed Pad |
Manufacturer: NXP USA Inc.
Description: MOSFET N-CH 100V 37.6A 8HVSON
In Stock: 0
