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| Part Number | IGD515EI |
|---|---|
| Part Status | Not For New Designs |
| Driven Configuration | High-Side or Low-Side |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Voltage - Supply | 12 V ~ 16 V |
| Logic Voltage - VIL, VIH | 0.9V, 3.8V |
| Current - Peak Output (Source, Sink) | 15A, 15A |
| Input Type | - |
| High Side Voltage - Max (Bootstrap) | - |
| Rise / Fall Time (Typ) | 40ns, 40ns |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
Manufacturer: Infineon Technologies
Description: IGBT 1200V 3.2A 28W TO252-3
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Manufacturer: Infineon Technologies
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